Time Evolution in Radiation Intensities of C2 and H Spectra in Ar/CH4/H2 Pulse Modulated Induction Thermal Plasmas for Diamond Film Deposition

11th Asia Pacific Conference on Plasma Science and Technology;25th Symposium on Plasma Science for Materials

Haruta, Yosuke^1 ; Fujimoto, Kenta^1 ; Horita, Sosuke^1 ; Tanaka, Yasunori^1,2 ; Uesugi, Yoshihiko^1,2 ; Ishijima, Tatsuo^2

Faculty of Electrical and Computer Engineering, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan^1

Research Center for Sustainable Energy and Technology, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan^2

关键词: Diamond film deposition;    Induction thermal plasma;    Modulation cycles;    Polycrystalline diamond films;    Radiation intensity;    Si (100) substrate;    Silicon substrates;    Spectral intensity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/441/1/012017/pdf
DOI  :  10.1088/1742-6596/441/1/012017

来源: IOP

【 摘 要 】

The present paper describes the first trial application of an Ar/CH4/H2pulse modulated induction thermal plasma (PMITP) to polycrystalline diamond film deposition on a silicon substrate. The PMITP system has been originally developed by our group to control the heat flux and densities of chemical species in thermal plasma treatment. Polycrystalline diamond film was successfully deposited on a 25×25 mm2Si(100) substrate using the PMITP. Spectroscopic observation was carried out to measure the time evolution in the spectral intensity from the PMITP irradiated to the Si substrate. We found that the C2molecular spectra have strong intensities at 4-7 ms after rise-up of the coil current, while the H spectral line has much high intensity at 6-12 ms in a 15 ms modulation cycle. This implies that the PMITP produces repetitive irradiation from different chemical fields in one modulation cycle, which may effectively provide diamond film deposition.