Fabrication of Ni/Ti/Al Schottky contact to n-type 4H-SiC under various annealing conditions

6th Vacuum and Surface Sciences Conference of Asia and Australia

Zaman, M. Yousuf^1,3 ; Ferrero, S.^1,3 ; Perrone, D.^2,3 ; Scaltrito, L.^1,3 ; Shahzad, N.^1,2,3 ; Pugliese, D.^1,2,3

Department of Applied Science and Technology, Politecnico di Torino, 10129 Torino, Italy^1

Italian Institute of Technology, Center for Human Robotics, C.so Trento 21 Torino, Italy^2

X-Lab Materials and Microsystems Laboratory, via Lungo Piazza d'Armi 6, Chivasso, Italy^3

关键词: Annealing condition;    Ideality factors;    IV characteristics;    Ni/Ti/Al;    Schottky barrier heights;    Schottky contacts;    Silicon carbide schottky diodes;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/439/1/012027/pdf
DOI  :  10.1088/1742-6596/439/1/012027

来源: IOP

【 摘 要 】

Forward I-V characteristics of a silicon carbide Schottky diode, with triple layer metallization Ni/Ti/Al as Schottky contact, are presented. Effects of different annealing conditions on the Schottky barrier height and ideality factor are discussed. The diodes were annealed in inert Ar atmosphere for 30 minutes at temperatures ranging from 600°C to 800°C. The ideality factors of the four diodes, chosen out of 20 diodes, range from 1.02 to 1.13 and the Schottky barrier heights range from 1.47 eV to 3.17 eV.