Study on annealing experiment of AlGaInP - based LED wafer by electron beam irradiation

2018 International Conference on Advanced Materials, Intelligent Manufacturing and Automation

材料科学;机械制造;运输工程

Yu, L.Y.^1 ; He, J.G.^2 ; Yang, L.^2 ; Han, B.^2

School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin

300387, China^1

School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin

300387, China^2

关键词: Annealing condition;    Annealing experiments;    Comparative tests;    Electron beam irradiation;    Epitaxial wafers;    Forward voltage;    Internal structure;    Luminescence intensity;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/382/2/022072/pdf
DOI  :  10.1088/1757-899X/382/2/022072

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Electron beam irradiation AlGaInP - based LED epitaxial wafers can change their internal structure to improve their luminous performance. Annealing can repair a part of damages induced by irradiation and affect the luminous performance of LED. In this paper, the optical properties and electrical properties of AlGaInP - based LED epitaxial wafers irradiated by different energy and dose electron beam are investated. The annealing experiment condition are 900°C with 1s and 460°C with 15min. In the comparative test, it is shown that the epitaxial wafer failure at 900°C, the luminescence intensity of the epitaxial wafer after annealing is higher than before, and still higher than that before irradiation at the annealing condition of 460°C, While the forward voltage is lower. The results of the experiments are analyzed.