Study of Cu2ZnSn(S,Se)4 Thin Films for Solar Cell Application

Tunisia-Japan Symposium: R&D of Energy and Material Sciences for Sustainable Society

能源学;材料科学;政治学;社会学

Islam, Muhammad Monirul^1,2 ; Halim, Mohammad Abdul^2 ; Joy, Chon^2 ; Luo, Xianjia^2 ; Sakurai, Takeaki^2 ; Sakai, Noriyuki^3 ; Kato, Takuya^3 ; Sugimoto, Hiroki^3 ; Tampo, Hitoshi^4 ; Shibata, Hajime^4 ; Niki, Shigeru^4 ; Katsuhiro, Akimoto^1,2

Graduate School of Pure and Applied Sciences, Alliance for Research on North Africa (ARENA), University of Tsukuba, Japan^1

Institute of Applied Physics, University of Tsukuba, Japan^2

Energy Solution Business Center, Showa Shell Sekiyu K.K., Japan^3

National Institute of Advanced Industrial Science and Technology (AIST), Japan^4

关键词: Compositional variation;    Dark current-voltage;    Growth conditions;    Ideality factors;    Inhomogeneities;    Recombination centers;    Series resistances;    Solar-cell applications;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/596/1/012019/pdf
DOI  :  10.1088/1742-6596/596/1/012019

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Cu2ZnSn(S,Se)4 (CZTSSe) thin films with various Cu/Sn ratio in the films have been investigated to study the effect of compositional variation over the electrical, optical, and structural properties of the film. Surface morphology and grain size were found to be significantly influenced by the Cu/Sn ratio in the films and grain size was found better for the samples with moderate Cu/Sn ratio of 1.75. Irrespective of the growth condition and compositional variation, all the CZTSSe crystals show that grains are oriented along (112) direction as evident from the room temperature XRD data. Dark current-voltage (I-V) curve reveals that that sample with Cu/Sn 1.75 exhibits lowest leakage current, while sample with Cu/Sn 1.85 has the highest leakage current along with larger ideality factor indicating larger recombination centers in this film. Series resistance was also found to be higher in the sample with higher Cu-content. An anomaly in the optical band-gap has been explained with the presences of impurity phases and compositional inhomogeneities in the CZTSSe materials.