Numerical Study of AlN Growth in MOCVD Heated by Induction

2019 5th International Conference on Energy Materials and Environment Engineering

能源学;生态环境科学

Lu, Ligen^1 ; Li, Zhiming^1 ; Zhao, Lili^1 ; Guo, Runqiu^2 ; Feng, Lansheng^2

Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan, China^1

School of Mechano-Electronic Engineering, Xidian University, Xi'an, China^2

关键词: A3. metal organic chemical vapor deposition (MOCVD);    Aluminum nitride (AlN);    Growth precursors;    Increased temperature;    Mixed carrier;    Parameter optimization;    Parasitic reaction;    Temperature changes;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/295/5/052027/pdf
DOI  :  10.1088/1755-1315/295/5/052027

学科分类：环境科学（综合）

来源: IOP

【 摘 要 】

In this paper, the process of growing aluminum nitride(AlN) film in the metal organic chemical vapor deposition(MOCVD) reactor heated by induction was simulated, and several important factors affecting the growth rate were analyzed. The purpose of this study is to explore the relationship between these factors and the growth rate of AlN films, and to provide feasible guidance for the parameter optimization of the growth of AlN film. It was concluded that compared with the pure nitrogen(N2) or hydrogen(H2) as the carrier gas, the growth rate was obviously improved under the conditions of using the mixed carrier gases composed of N2 and H2. In addition, the uniformity of AlN film and the growth rate can be improved with the increase of H2 ratio. It was also found that the growth rate of the film gradually decreased with the increased temperature of the gases introduced into the reactor, but the uniformity increased. Dimer is the main growth precursor of the film. In the parasitic reaction, the trimer has the greatest influence on the film, and the concentration of the polymer is more susceptible to temperature changes.