Crystalline growth of AlN thin films by atomic layer deposition

27th Micromechanics and Microsystems Europe Workshop

物理学;力学

Sadeghpour, S.^1 ; Ceyssens, F.^1 ; Puers, R.^1

ESAT-MICAS, KU Leuven, Leuven, Belgium^1

关键词: Aluminum nitride (AlN);    Crystalline growth;    Crystalline thin films;    Layer deposition;    Plasma-enhanced atomic layer deposition;    Reaction cycles;    Thickness variation;    Trimethylaluminum;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/757/1/012003/pdf
DOI  :  10.1088/1742-6596/757/1/012003

学科分类：力学，机械学

来源: IOP

【 摘 要 】

Aluminum nitride (AlN) thin film was grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia precursors. A method was found to have crystalline thin film AlN with almost zero thickness variation and a truly one layer deposition of atoms per each cycle of the process. The growth rate saturated at ∼ 1 Å/cycle, and the thickness was proportional to the number of reaction cycles. The preferred crystal orientation, uniformity of the nucleation and the surface roughness of the grown AlN were investigated. X-ray diffraction (XRD), atomic focused microscopy (AFM) and scanning electron microscopy (SEM) were carried out to analyze the crystallinity and properties of the films.