Simulation of low energy ion implantation in silicon

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Veselov, D.S.^1 ; Voronov, Y.A.^1 ; Metel, Yu.V.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Boron in silicon;    Impurities concentration;    Indium doping;    Low energy ion implantation;    Nanoscale MOSFETs;    Short-channel effect;    Silicon substrates;    Super steep retrograde;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012035/pdf
DOI  :  10.1088/1757-899X/498/1/012035

来源: IOP

【 摘 要 】

This report is devoted to simulation of distributions of boron and indium ions implanted into the silicon substrates with energies up to 10 keV. The simulation was conducted immediately after implantation and after subsequent annealing in inert and oxidizing ambient. Post-implant and post-anneal distributions of impurities concentration versus depth were obtained. It was demonstrated, that the super-steep retrograde distribution of indium in silicon is provided exactly by the annealing in an oxidizing ambient. Also, it was demonstrated, that the annealing does not provide the super-steep retrograde distribution of boron in silicon. Thus, it was shown, that indium doping of gate region contributes to suppression of the short-channel effects in nanoscale MOSFETs, unlike boron doping.