Total dose measurements by p-channel transistors of ICs

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Butin, V.I.^1^2 ; Butin, I.V.^3 ; Butina, A.V.^1

Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia^1

National Research Nuclear University MEPhI, Moscow, Russia^2

Bauman Moscow Technical University (BMSTU), Moscow, Russia^3

关键词: Dose effects;    Drain voltage;    New approaches;    Numerical parameters;    P channels;    Physical model;    Semiconductor components;    Total dose;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012007/pdf
DOI  :  10.1088/1757-899X/498/1/012007

来源: IOP

【 摘 要 】

In this paper, a new approach of p-channel MOS-transistors used for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for the MOSFETs electro-physical model of dose effects. We propose to calculate the total dose of ionization flux using the results of MOS-transistors drain current measurements, under a fixed gate and drain voltage.