| 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures | |
| Hybrid plasma modes in transistors: linear and non-linear responses | |
| Marinchio, H.^1 ; Korotyeyev, V.^2 ; Palermo, C.^1 ; Varani, L.^1 | |
| Institute of Electronics and Systems, UMR CNRS 5214, University of Montpellier, France^1 | |
| Institute of Semiconductor Physics, Kiev | |
| 03650, Ukraine^2 | |
| 关键词: Different geometry; Drain voltage; Eigen frequencies; External excitation; Hybrid plasma; Hydrodynamic equations; Non-linear response; Two dimensional Poisson equation; | |
| Others : https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012035/pdf DOI : 10.1088/1742-6596/647/1/012035 |
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| 来源: IOP | |
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【 摘 要 】
We present an analytical model based on hydrodynamic equations and a pseudo-two-dimensional Poisson equation to study the response of a nanometric field-effect transistor channel in the THz domain. This model allows to study different kinds of external excitations of plasma modes and different geometries. We calculate the two first-order responses of the drain voltage or current, which are of peculiar interest in the perspective of THz wave generation and detection and THz electronics. Even at room temperature, each responses present resonances at the eigenfrequencies of the hybrid plasma modes sustained in the channel.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| Hybrid plasma modes in transistors: linear and non-linear responses | 1224KB |
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