Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

International Conference on Mechanical Engineering Research and Application

Simanjuntak, F.M.^1^2 ; Chandrasekaran, S.^3 ; Gapsari, F.^4 ; Tseng, T.Y.^5

WPI-Advanced Institute for Materials Research, Tohoku University, Sendai

980-8577, Japan^1

Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu

30010, Taiwan^2

Department of Electrical Engineering and Computer Sciences, National Chiao Tung University, Hsinchu

30010, Taiwan^3

Department of Mechanical Engineering, Brawijaya University, Malang

65145, Indonesia^4

Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu

30010, Taiwan^5

关键词: Conduction Mechanism;    Device performance;    Intermediate state;    On/off ratio;    Programming voltage;    Resistive switching;    Switching characteristics;    Valence change;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/494/1/012027/pdf
DOI  :  10.1088/1757-899X/494/1/012027

来源: IOP

【 摘 要 】

This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.