XPS studies of charging effect induced by X-ray irradiation on amorphous SiO2 thin films

2nd International Symposium on Application of Materials Science and Energy Materials

材料科学;能源学

Xing, Dai Peng^1 ; Zhong Zeng, Hui^1 ; Xu Zhang, Wen^1 ; Li Zhang, Wan^1

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

611731, China^1

关键词: Amorphous SiO2;    Charge accumulation;    Charging effect;    Highly reflective coatings;    Positive charges;    SiO2 thin films;    Situ x-rays;    X ray irradiation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/490/2/022079/pdf
DOI  :  10.1088/1757-899X/490/2/022079

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

X-ray photoelectron spectroscopy has been used to investigate positive charge accumulation on amorphous SiO2 films induced by in situ X-ray irradiation. We found out two different kinds of samples. The charge accumulation at the surface affects the properties of films. Then, by examining the significant changes of chemical shift and FWHM value, the films show a character of saturation during the process and the results can trace to oxygen vacancies. From the results of loss measured before and after the irradiation, we can say that the performance of highly reflective coatings, especially the surface SiO2 thin films, will directly affect the gyro abilities.