学位论文

1 Low-Frequency Noise in Silicon-Germanium BiCMOS Technology [学位论文]

作者:Jin, Zhenrong, Electrical and Computer Engineering

论文开放时间:2004

关键词:BiCMOS;SiGe;...

培养单位:University:Georgia Institute of Technology

摘要

2 Design, scaling and reliability of devices for high-performance mixed-signal applications [学位论文]

作者:Chakraborty, Partha Sarathi, Cressler, John D. Electrical and Computer Engineering Naeemi, Azad J. Vogel, Eric M. Mukhopadhyay, Saibal Davis, Jeffrey A., Cressler, John D.

论文开放时间:2015

关键词:Silicon-germanium;Heterojunction bipolar transistor;...

培养单位:University:Georgia Institute of Technology

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摘要

3 Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments [学位论文]

作者:Omprakash, Anup, Cressler, John D Electrical and Computer Engineering Shen, Shyh-Chiang Lourenco, Nelson E Mukhopadhyay, Saibal Deo, Chaitanya S, Cressler, John D

论文开放时间:2019

关键词:Silicon-germanium;SiGe;...

培养单位:University:Georgia Institute of Technology

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4 Design of High-Speed SiGe HBT Circuitsfor Wideband Transceivers [学位论文]

作者:Lu, Yuan, Electrical and Computer Engineering

论文开放时间:2007

关键词:High-speed circuits;HBT;...

培养单位:University:Georgia Institute of Technology

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5 Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications [学位论文]

作者:Cardoso, Adilson Silva, Cressler, John D. Electrical and Computer Engineering Gebara, Edward Davis, Jeffrey A. Beyah, Raheem A. Paki, Pauline F. Moore, Darnell J., Cressler, John D.

论文开放时间:2014

关键词:SiGe;RF switches;...

培养单位:University:Georgia Institute of Technology

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摘要

6 Mitigation of transient radiation effects in advanced silicon-germanium technologies [学位论文]

作者:Lourenco, Nelson Estacio, Cressler, John D. Electrical and Computer Engineering Papapolymerou, Ioannis Durgin, Gregory D. Buchner, Stephen P. Deo, Chaitanya S., Cressler, John D.

论文开放时间:2016

关键词:SiGe;Radiation;...

培养单位:University:Georgia Institute of Technology

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摘要