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 全选  【符合条件的数据共：12条】

1 Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments [学位论文]

作者:Omprakash, Anup, Cressler, John D Electrical and Computer Engineering Shen, Shyh-Chiang Lourenco, Nelson E Mukhopadhyay, Saibal Deo, Chaitanya S, Cressler, John D   

论文开放时间:2019

关键词:Silicon-germanium;SiGe;...

培养单位:University:Georgia Institute of Technology

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2 Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications [学位论文]

作者:Cardoso, Adilson Silva, Cressler, John D. Electrical and Computer Engineering Gebara, Edward Davis, Jeffrey A. Beyah, Raheem A. Paki, Pauline F. Moore, Darnell J., Cressler, John D.   

论文开放时间:2014

关键词:SiGe;RF switches;...

培养单位:University:Georgia Institute of Technology

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3 Mono-layer C-face epitaxial graphene for high frequency electronics [学位论文]

作者:Guo, Zelei, de Heer, Walter A. Physics Jiang, Zhigang Conrad, Edward H. First, Phillip N. Cressler, John D., de Heer, Walter A.   

论文开放时间:2014

关键词:SiC;RF;...

培养单位:University:Georgia Institute of Technology

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4 Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies [学位论文]

作者:Arora, Rajan, Cressler, John Electrical and Computer Engineering Davis, Jeff Kohl, Paul Papapolymerou, John Shen, Shyh-Chiang, Cressler, John   

论文开放时间:2012

关键词:CMOS;RF;...

培养单位:University:Georgia Institute of Technology

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5 Design and reliability of high dynamic range RF building blocks in SOI CMOS and SiGe BiCMOS technologies [学位论文]

作者:Madan, Anuj, Electrical and Computer Engineering   

论文开放时间:2011

关键词:SOI;Dynamic range;...

培养单位:University:Georgia Institute of Technology

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6 Degree-per-hour mode-matched micromachined silicon vibratory gyroscopes [学位论文]

作者:Zaman, Mohammad Faisal, Electrical and Computer Engineering   

论文开放时间:2008

关键词:SOI;Silicon micromachining;...

培养单位:University:Georgia Institute of Technology

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