1 Single Crystal Rhombohedral Epitaxy of Sige on Sapphire at 450.Degree. C.-500.Degree. C. Substrate Temperatures [科技报告]
作者:Choi, Sang Hyouk InventorDuzik, Adam J Inventor
发布日期:2018
关键词:EPITAXY;RHOMBOHEDRONS;...
发布机构:
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