Single Crystal Rhombohedral Epitaxy of Sige on Sapphire at 450.Degree. C.-500.Degree. C. Substrate Temperatures

Choi, Sang Hyouk [Inventor]Duzik, Adam J [Inventor]

关键词: EPITAXY;    RHOMBOHEDRONS;    SAPPHIRE;    ALUMINUM OXIDES;    SURFACE TEMPERATURE;    CRYSTAL GROWTH;    PATENTS;    SINGLE CRYSTALS;   

RP-ID  :  US-Patent-10,096,472, US-Patent-Appl-SN-15/386,592

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来源: NASA Technical Reports Server

【 摘 要 】

Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.