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1 The study of influence of the gas flow rate to etched layer thickness, and roughness of the anisotropy field of gallium arsenide is etched in the plasma chemical etching process [会议论文]

作者:Ageev, O.A.^1;Klimin, V.S.^1;Solodovnik, M.S.^1;等

关键词:Anisotropy field;Chemical-etching process;...

会议举办机构:Department of Nanotechnologies and Microsystems, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 2 Shevchenko Street, Taganrog

会议时间:2016

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