The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistors

Reliability;Hot carrier damage;Mixed-mode stress;Impact ionization;Self-heating;SiGe HBTs;Cryogenic temperature

Zhu, Chendong ; Electrical and Computer Engineering

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: Reliability;    Hot carrier damage;    Mixed-mode stress;    Impact ionization;    Self-heating;    SiGe HBTs;    Cryogenic temperature;   

Others  :  https://smartech.gatech.edu/bitstream/1853/14647/1/Zhu_Chendong_200705_PhD.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry, after which the new stress path, Mixed-Mode stress, is introduced. Chapter 2 is devoted to an in-depth discussion of damage mechanisms that includes the impact ionization effct and the selfheating effect. Chapter 3 goes onto the impact ionization effect using two-dimensional calibrated MEDICI simulations. Chapter 4 assesses the reliability of SiGe HBTs in extreme temperature environmentsby way of comprehensive experiments and MEDICI simulations. A comparison of the devicelifetimes for reverse-EB stress and mixed-mode stress indicates different damage mechanismsgovern these phenomena. The thesis concludes with a summary of the project and suggestions forfuture research in chapter 5.