Spin dependent current injection into epitaxial graphene nanoribbons

Graphene;Nanoribbons;Transport;Magnetism;Nanoelectronics;Spintronics

Hankinson, John H. ; de Heer, Walter Physics First, Phillip Conrad, Edward Jiang, Zhigang Haddon, Robert ; de Heer, Walter

University:Georgia Institute of Technology

Department:Physics

关键词: Graphene;    Nanoribbons;    Transport;    Magnetism;    Nanoelectronics;    Spintronics;   

Others  :  https://smartech.gatech.edu/bitstream/1853/53884/1/HANKINSON-DISSERTATION-2015.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Over the past decade there has been a great deal of interest in graphene, a 2-dimensional allotrope of carbon with exceptional mechanical and electrical properties.Its outstanding mobility, minimal size, and mechanical stability make it an appealing material for use in next generation electronic devices.Epitaxial graphene growth on silicon carbide is a reliable, scalable method for the production of high quality graphene films.Recent work has shown that the SiC can be patterned prior to graphitization, in order to selectively grow graphene nanostructures.Graphene nanoribbons grown using this technique do not suffer from the rough edges caused by lithographic patterning, and recent measurements have revealed extraordinary transport properties.In this thesis the magnetic properties of these nanoribbons are investigated through spin polarized current injection.The sensitivity of these nanoribbons to spin polarized current is interesting from a fundamental physics standpoint, and may find applications in future spintronic devices.