Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications

SEU;RHBD;SEE;SiGe HBTs

Phillips, Stanley David ; Electrical and Computer Engineering

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: SEU;    RHBD;    SEE;    SiGe HBTs;   

Others  :  https://smartech.gatech.edu/bitstream/1853/45854/1/phillips_stanley_d_201212_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Field-effect transistor technologies have been critical building blocks forsatellite systems since their introduction into the microelectronics industry. Theextremely high cost of launching payloads into orbit necessitates systems to havesmall form factor, ultra low-power consumption, and reliable lifetime operation,while satisfying the performance requirements of a given application. Silicon-basedcomplementary metal-oxide-semiconductors (Si CMOS) have traditionally been able toadequately meet these demands when coupled with radiation hardening techniques thathave been developed over years of invested research. However, as customer demandsincrease, pushing the limits of system throughput, noise, and speed, alternativetechnologies must be employed. Silicon-germanium BiCMOS platforms have beenidentfied as a technology candidate for meeting the performance criteria of thesepioneering satellite systems and deep space applications, contingent on their ability tobe hardened to radiation-induced damage. Given that SiGe technology is a relative new-comer to terrestrial and extra-terrestrial applications in radiation-rich environments,the same wealth of knowledge of time-tested radiation hardening methodologies hasnot been established as it has for Si CMOS. Although SiGe BiCMOS technology hasbeen experimentally proven to be inherently tolerant to total-ionizing dose damagemechanism, the single event susceptibility of this technology remains a primary concern.The objective of this research is to characterize the physical mechanisms that drive theorigination of ion-induced transient terminal currents in SiGe HBTs that subsequentlylead to a wide range of possible single event phenomena. Building upon this learning,a variety of device-level hardening methodologies are explored and tested for efficacy.