In this work novel solid-state neutron detectors based on Gallium Nitride (GaN) have been produced and characterized.GaN is a radiation hard semiconductor which is commonly used in commercial optoelectronic devices.The important design consideration for producing GaN-based neutron detectors have been examined, and device simulations performed.Scintillators and p-i-n diode-type neutron detectors have been grown by metalorganic chemical vapor deposition (MOCVD) and characterized.GaN was found to be intrinsically neutron sensitive through the Nitrogen-14 (n, p) reaction.Neutron conversion layers which produce secondary ionizing radiation were also produced and evaluated.GaN scintillator response was found to scale highly linearly with nuclear reactor power, indicating that GaN-based detectors are suitable for use in the nuclear power industry.This work is the first demonstration of using GaN for neutron detection.This is a novel application for a mature semiconductor material.The results presented here provide a proof-of-concept for solid-state GaN-based neutron detectors which offer many potential advantages over the current state-of-the-art, including lower cost, lower power operation, and mechanical robustness.At present Helium-3 proportional counters are the preferred technology for neutron detection, however this isotope is extremely rare, and there is a global shortage.Meanwhile demand for neutron detectors from the nuclear power, particle physics, and homeland security sectors requires development of novel neutron detectors which are which are functional, cost-effective, and deployable.
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Development of wide bandgap solid-state neutron detectors
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