Development of high-efficiency solar cells on thin silicon through design optimization and defect passivation

Dielectric passivation;Passivation;Thin solar cell;Silicon nitride;Hydrogenation;Multicrystalline

Sheoran, Manav ; Physics

University:Georgia Institute of Technology

Department:Physics

关键词: Dielectric passivation;    Passivation;    Thin solar cell;    Silicon nitride;    Hydrogenation;    Multicrystalline;   

Others  :  https://smartech.gatech.edu/bitstream/1853/33902/1/sheoran_manav_200904_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

The overall goal of this research is to improve fundamental understanding of the hydrogen passivation of defects in low-cost silicon and the fabrication of high-efficiency solar cells on thin crystalline silicon through low-cost technology development. A novel method was developed to estimate the flux of hydrogen, released from amorphous silicon nitride film, into the silicon. Rapid-firing-induced higher flux of hydrogen was found to be important for higher defect passivation. This was followed by the fabrication of solar cell efficiencies of ~ 17% on low-cost, planar cast multicrystalline silicon. Solar cell efficiencies and lifetime enhancement in the top, middle, and bottom regions of cast multicrystalline silicon ingots were explained on the basis of impurities and defects generally found in those regions. In an attempt to further reduce the cost, high-efficiency solar cells were fabricated on thin crystalline silicon wafers with full area aluminum-back surface field. In spite of loss in efficiency, wafer thinning reduced the module cost. Device modeling was performed to establish a roadmap towards high-efficiency thin cells and back surface recombination velocity and back surface reflectance were identified as critical parameters for high-efficiency thin cells. Screen-printed solar cells on float zone material, with efficiencies > 19% on 300 μm and > 18% on 140 μm were fabricated using a novel low-cost fabrication sequence that involved dielectric rear passivation along with local contacts and back surface field.