Growth of Binary Alloyed Semiconductor Crystals by the Vertical Bridgman-Stockbarger Process with a Strong Magnetic Field.

crystal growth;bridgman

LaPointe, Stephen James ; Dr. Richard Johnson, Committee Member,Dr. Nancy Ma, Committee Chair,Dr. Kevin Lyons, Committee Member,LaPointe, Stephen James ; Dr. Richard Johnson ; Committee Member ; Dr. Nancy Ma ; Committee Chair ; Dr. Kevin Lyons ; Committee Member

University:North Carolina State University

关键词: crystal growth;    bridgman;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/759/etd.pdf?sequence=1&isAllowed=y

美国|英语

来源: null

【 摘 要 】

This thesis presents a model for the unsteady species transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field.During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large.These compositional variations drive compositionally-driven buoyant convection, or solutal convection, in addition to thermally-driven buoyant convection.These buoyant convections drive convective transport which produces non-uniformities in the concentration in both the melt and the crystal.This transient model predicts the distribution of species in the entire crystal grown in a steady axial magnetic field.The present study presents results of concentration in the crystal and in the melt at several different stages during crystal growth.