Process Development for High Speed Transistor Laser Operation

Transistor Laser

James, Adam L.

关键词: Transistor Laser;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/18567/James_Adam.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

The transistor laser (TL) o ers advantages over conventional diode laser structure. The TLuses high base doping and minority carrier collection to reduce the recombination lifetimein the active region of the device to <30 ps. A fast recombination lifetime <30 ps reducesthe photon-carrier resonance when modulating the device at RF frequencies. However,the transistor laser with high intrinsic optical speed is limited by more than just internalrecombination lifetime; it is also limited by parasitic resistances and capacitances. Smallsignal bandwidth of 20 GHz and digital modulation of 20 Gbit/s was obtained by reducingor eliminating extrinsic parasitics which limit device performance through the optimizationof device geometry and process conditions.