Depositing highly crystalline thin film silicon for photovoltaic solar cells utilizing metal surface wave plasmas

Metal Surface Wave Plasma;Raman Spectroscopy;Micro-Crystalline Silicon;X-Ray Diffraction (XRD);Grain Size

Zonooz, Piyum ; Ruzic ; David N.

关键词: Metal Surface Wave Plasma;    Raman Spectroscopy;    Micro-Crystalline Silicon;    X-Ray Diffraction (XRD);    Grain Size;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/46597/Piyum_Zonooz.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This thesis aims to explore the ability of the Metal Surface Wave Plasma (MSWP) to create low damage, high speed deposited silicon thin films for solar photovoltaics. Studies characterizing thin films have been performed in the past, but very few utilizing the MSWP. Due to the high electron densities and low electron temperatures characteristic of MSWPs, it is shown that this type of plasma is an ideal candidate for large area, high speed, low damage thin film deposition. The quantitative methods of examining films created by the MSWP system are analyzed through a series of diagnostic tools including: scanning electron microscopy, transmission electron microscopy, profilometry, x-ray diffraction and Raman spectroscopy. This work comprehensively discusses and compares different analytical techniques and methodologies – a shortcoming of prior works. In addition, it is demonstrated that the MSWP system can deposit tandem junction morphologies, ranging from microcrystalline to amorphous silicon films. This validates MSWPs as a robust PECVD source to deposit thin films quickly, yet flexible enough to deposit both amorphous and microcrystalline silicon.