An Isolated High-Voltage High-Frequency Pulsed Power Converter for Plasma Generation

Pulsed power;Power electronics;Boost;Resonant;Parasitic parameters;SiC MOSFETs;Electrical engineering;Electrical Engineering, College of Engineering & Computer Science

You, ChangqiSu, Wencong ;

University of Michigan

关键词: Pulsed power;    Power electronics;    Boost;    Resonant;    Parasitic parameters;    SiC MOSFETs;    Electrical engineering;    Electrical Engineering, College of Engineering & Computer Science;   

Others  :  https://deepblue.lib.umich.edu/bitstream/handle/2027.42/143180/Master%20thesis_%20Changqi%20You%20_format%20check_V3.pdf?sequence=1&isAllowed=y

瑞士|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This thesis reviews plasma technology, pulsed power technology, basic structures of pulsed power generator and semiconductor devices. Based on above, an isolated highvoltage pulsed power converter with high repetitive frequency for low power level application such as ozone generation is proposed in this thesis. The hardware for proposed pulsed power converter is well set up. The output pulsed voltage can reach -12 kV with pulse frequency up to 15 kHz. The pulse interval is designed as 1.6 μs. Theproposed pulsed power converter system could be divided into two main parts, which are boost converter stage and a resonant stage. This thesis detailly introduces the structureand operating principles of the boost converter stage and the resonant stage. As for the boost converter stage, both analog control and digital control are applied to achieve the boost voltage function and power limiting function. As for the resonant stage, a pulse generating signal and spark protection function is achieved with a DSP control.This thesis also detailly gives an analysis for parasitic parameters of the proposed pulsed power converter system. Parasitic capacitances of SiC MOSFETs will affect spike performance of the proposed pulsed power converter system. A mathematical model of describing a relationship between parasitic capacitances of SiC MOSFETs and the spike voltage of the proposed pulsed power converter is proposed in this thesis. A comparison test is conducted to prove the proposed analysis.