Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb.

Donetsky, D. ; Anikeev, S. ; Gu, N. ; Belenky, G. ; Luryi, S. ; Wang, C. A. ; Shiau, D. A. ; Dashiell, M. ; Beausang, J. ; Nichols, G.

Technical Information Center Oak Ridge Tennessee

关键词: Recombination processes;    Photoluminescence;    Thermophotovoltaics;    Confinement;    Excitation;   

RP-ID  :  DE2005837455

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s.