Recombination Parameters in InGaSb Epitaxial Layers for Thermophotovoltaic Applications.

Kumar, R. J. ; Gutmann, R. J. ; Borrego, J. M. ; Dutta, P. S. ; Wang, C. A. ; Martinelli, R. U. ; Nichols, G.

Technical Information Center Oak Ridge Tennessee

关键词: Thermophotovoltaics;    Engineering;    Velocity;    Simulaitons;    Measurements;   

RP-ID  :  DE2004821373

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameter and surface recombination velocity (SRV) in doubly-capped 0.55 eV, 2 x 10(sup 17) cm(sup -3) doped p-InGaAsSb epitaxial layers for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90-100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 x 10(sup -11) cm(sup 3)/s and Auger coefficient (C) of 1 x 10(sup -28) cm(sup 6)/s.