Inverted GalnP/GaAs/InGaAs Triple-junction Solar Cells with Low-stress Metamorphic Bottom Junctions.

Geisz, J. F. ; Kurtz, S. R. ; Wanlass, M. W. ; Ward, J. S. ; Duda, A.

Technical Information Center Oak Ridge Tennessee

关键词: Solar cells;    Gallium phosphides;    Gallium arsenides;    Junctions;    Indium arsenides;   

RP-ID  :  DE2008940664

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.