Defects at the Carbon Terminated SiC (001) Surface.

Catellani, A. ; Galli, G.

Technical Information Center Oak Ridge Tennessee

关键词: Carbon;    Defects;    Silicon carbides;    Point defects;    Nitrides;   

RP-ID  :  DE200415006137

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

We present first principle molecular dynamics simulations for selected point defects on the (001) stoichiometric carbon terminated surface of cubic Silicon Carbide. In particular we investigated missing units and coordination defects. The results of our calculations are compared with recent experiments, in particular we discuss simulated STM images, which are in good agreement with measured ones.