Determination of Late-Time gamma-Ray (sup 60 Co) Sensitivity of Single Diffusion Lot 2N222A Transistors.

Russsell, K. ; Kajder, K. C. ; Peters, C. D.

Technical Information Center Oak Ridge Tennessee

关键词: Diffusion;    Transistors;    Integrated circuits;    Irradiation;    Gamma radiation;   

RP-ID  :  DE2008940518

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time (gamma)-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the (sup 60)Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF.