Plasmonic Enhanced Ultrafast Switch.

Shaner, E. A. ; Passmore, B. ; Barrick, T. ; Harris, T. ; Subramania, G. ; Reno, J.

Technical Information Center Oak Ridge Tennessee

关键词: Switches;    Electrical transients;    Electrodes;    Plasmons;    Photoconductors;   

RP-ID  :  DE2010973847

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.