科技报告详细信息
| AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy. | |
| Wang, C. A. ; Vineiso, C. J. ; Calawa, D. R. | |
| Technical Information Center Oak Ridge Tennessee | |
| 关键词: Bragg reflection; Vapor phase epitaxy; Aluminum arsenides; Gallium arsenides; Gallium antimonides; | |
| RP-ID : DE2004820701 | |
| 学科分类：工程和技术（综合） | |
| 美国|英语 | |
| 来源: National Technical Reports Library | |
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【 摘 要 】
The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| DE2004820701.pdf | 142KB |  download |
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