科技报告详细信息
| Atmospheric Pressure Iodine Vapor Transport for Thin-Silicon Growth: Preprint. | |
| Wang, T. H. | |
| Technical Information Center Oak Ridge Tennessee | |
| 关键词: Meetings; Silicon; Atmospheric pressure; Grain size; Substrates; | |
| RP-ID : DE200215000028 | |
| 学科分类：工程和技术（综合） | |
| 美国|英语 | |
| 来源: National Technical Reports Library | |
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【 摘 要 】
Presented at 2001 NCPV Program Review Meeting: Randomly oriented or(110) pc-Si layers grown on foreign and Si substrates by atmospheric pressure IVT with high rates and large grain sizes.【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| DE200215000028.pdf | 719KB |  download |
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