High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Sood, Ashok K ; Zeller, John W ; Ghuman, Parminder ; Babu, Sachidananda ; Dupuis, Russell D

关键词: AVALANCHE DIODES;    DETECTION;    EPITAXY;    GALLIUM NITRIDES;    HIGH GAIN;    HIGH RESOLUTION;    IMAGING TECHNIQUES;    METALORGANIC CHEMICAL VAPOR DEPOSITION;    PHOTODIODES;    QUANTUM EFFICIENCY;    SEMICONDUCTORS (MATERIALS);    SPECTRAL BANDS;    SUBSTRATES;    THERMAL EXPANSION;    ULTRAVIOLET DETECTORS;    VAPOR DEPOSITION;   

RP-ID  :  GSFC-E-DAA-TN75387

学科分类：航空航天科学

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.