Low Excess Noise, High Gain Avalanche Photodiodes

Bai, Xiaogang [Inventor]Yuan, Ping [Inventor]Sudharsanan, Rengarajan [Inventor]

关键词: ALUMINUM GALLIUM ARSENIDES;    AVALANCHE DIODES;    HIGH GAIN;    INDIUM GALLIUM ARSENIDES;    LOW NOISE;    OPTICAL COMMUNICATION;    PATENTS;    INVENTIONS;    NOISE REDUCTION;    QUANTUM WELLS;    PROBABILITY THEORY;    SUBSTRATES;   

RP-ID  :  US-Patent-10,128,397, US-Patent-Appl-SN-13/476,437

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来源: NASA Technical Reports Server

【 摘 要 】

A system, method, and apparatus for an avalanche photodiode with an enhanced multiplier layer are disclosed herein. In particular, the present disclosure teaches an avalanche photodiode having a multiplier with alternating layers of one or more quantum wells and one or more spacers. A method of making the avalanche photodiode includes growing the multiplier on a substrate.