A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

Jordan, Jennifer L ; Ponchak, George E ; Spry, David J ; Neudeck, Philip G

关键词: CIRCUITS;    DIODES;    ELECTRIC POTENTIAL;    HIGH FREQUENCIES;    HIGH TEMPERATURE ENVIRONMENTS;    INTEGRATED CIRCUITS;    SCHOTTKY DIODES;    TEMPERATURE MEASUREMENT;    VAPOR DEPOSITION;    CERAMICS;    DURABILITY;    HIGH CURRENT;    LEAKAGE;    OXIDES;    ROOM TEMPERATURE;    SEMICONDUCTORS (MATERIALS);    TETRAETHYL ORTHOSILICATE;   

RP-ID  :  GRC-E-DAA-TN45063

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.