Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

Article

关键词: GAAS-ALAS SUPERLATTICES;    ELECTRIC-FIELD DOMAINS;    MULTIPLE QUANTUM-WELLS;    SEMICONDUCTOR SUPERLATTICES;    ROOM-TEMPERATURE;    DIODES;    MODEL;    INSTABILITIES;    TRANSPORT;   

DOI  :  10.1103/PhysRevB.61.7261

来源: SCIE

【 摘 要 】

An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in the transition process from static to dynamic electric field domain formations. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. This dependence can be understood in terms of motion of the system along a limit cycle.

【 授权许可】

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