Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

Article

关键词: ELECTRIC-FIELD DOMAINS;    GAAS-ALAS SUPERLATTICES;    OSCILLATIONS;    MULTISTABILITY;    INSTABILITIES;    TRANSPORT;    MODEL;   

DOI  :  10.1103/PhysRevB.55.2466

来源: SCIE

【 摘 要 】

We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.

【 授权许可】

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