Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

Hornsberg, C. ; Doolittle, W. A. ; Ferguson, I.

National Renewable Energy Laboratory (U.S.)

关键词: Devices;    14 Solar Energy;    Pv;    Solar Cells Pv;    Solar Cells;   

DOI  :  10.2172/940680
RP-ID  :  NREL/SR-520-44186
RP-ID  :  AC36-99-GO10337
RP-ID  :  940680

美国|英语

来源: UNT Digital Library

【 摘 要 】

The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.