Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008

Tan, T. Y. ; Li, N.

National Renewable Energy Laboratory (U.S.)

关键词: Alloys;    Getters;    36 Materials Science;    Atoms;    Solubility;   

DOI  :  10.2172/939277
RP-ID  :  NREL/SR-520-44088
RP-ID  :  AC36-99-GO10337
RP-ID  :  939277

美国|英语

来源: UNT Digital Library

【 摘 要 】

This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.