Piezoelectric field in strained GaAs.

Chow, Weng Wah ; Wieczorek, Sebastian Maciej

Sandia National Laboratories

关键词: Strain Rate-Materials-Mathematical Models.;    Strain Gages.;    Impurities Strain Gages.;    Electrodes;    36 Materials Science;   

DOI  :  10.2172/923072
RP-ID  :  SAND2005-7246
RP-ID  :  AC04-94AL85000
RP-ID  :  923072

美国|英语

来源: UNT Digital Library

【 摘 要 】

This report describes an investigation of the piezoelectric field in strained bulk GaAs. The bound charge distribution is calculated and suitable electrode configurations are proposed for (1) uniaxial and (2) biaxial strain. The screening of the piezoelectric field is studied for different impurity concentrations and sample lengths. Electric current due to the piezoelectric field is calculated for the cases of (1) fixed strain and (2) strain varying in time at a constant rate.