Improving Switching Performance of Power MOSFETs Used in High Rep-Rate, Short Pulse, High-Power Pulsers

Cook, E G

Lawrence Livermore National Laboratory

关键词: Mosfet;    Evaluation;    42 Engineering;    Design;    Peak Load;   

DOI  :  10.2172/896001
RP-ID  :  UCRL-TR-224792
RP-ID  :  W-7405-ENG-48
RP-ID  :  896001

美国|英语

来源: UNT Digital Library

【 摘 要 】

As their switching and power handling characteristics improve, solid-state devices are finding new applications in pulsed power. This is particularly true of applications that require fast trains of short duration pulses. High voltage (600-1200V) MOSFETs are especially well suited for use in these systems, as they can switch at significant peak power levels and are easily gated on and off very quickly. MOSFET operation at the shortest pulse durations is not constrained by the intrinsic capabilities of the MOSFET, but rather by the capabilities of the gate drive circuit and the system physical layout. This project sought to improve MOSFET operation in a pulsed power context by addressing these issues. The primary goal of this project is to improve the switching performance of power MOSFETs for use in high rep-rate, short pulse, high-power applications by improving the design of the gate drive circuits and the circuit layouts used in these systems. This requires evaluation of new commercial gate drive circuits and upgrading the designs of LLNL-developed circuits. In addition, these circuits must be tested with the fastest available high-voltage power MOSFETs.