Conversion of Oxyfluoride Based Coated Conductors

Wesolowski, Dan

Massachusetts Institute of Technology

关键词: Partial Pressure;    Hydrofluoric Acid;    36 Materials Science;    Electric Conductors;    Oxyfluorides;   

DOI  :  10.2172/895036
RP-ID  :  DOE/ID/14507
RP-ID  :  FC07-03ID14507
RP-ID  :  895036

美国|英语

来源: UNT Digital Library

【 摘 要 】

Direct measurements of HF pressure in equilibrium with the film during the BaF2 process are sorely needed. It is the HF partial pressure that governs the rate at which the film composition is changing and is, therefore, an important factor in controlling the composition/time trajectory of the film. Establishing the composition/time trajectory of both MOD-derived and e-beam derived films for a given set of conditions is another goal for the project. These studies will provide a fundamental understanding of the ex situ process for producing coated conductors.