Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

Singh, R. K.

University of Florida

关键词: 36 Materials Science;    Lanthanum;    Dielectric Properties;    Thin Films;    Dielectric Materials;   

DOI  :  10.2172/836600
RP-ID  :  DOE/ER/45722-1
RP-ID  :  FG02-98ER45722
RP-ID  :  836600

美国|英语

来源: UNT Digital Library

【 摘 要 】

The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.