Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications

Kumar, R.J. ; Gutmann, J.J. ; Borrego, J.M. ; Dutta, P.S. ; Wang, C.A. ; Martinelli, R.U. ; Nichols, G.

Lockheed Martin

关键词: Velocity;    42 Engineering;    Recombination;    Simulation;   

DOI  :  10.2172/821373
RP-ID  :  LM-03K035
RP-ID  :  AC12-00SN39357
RP-ID  :  821373

美国|英语

来源: UNT Digital Library

【 摘 要 】

Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameter and surface recombination velocity (SRV) in doubly-capped 0.55 eV, 2 x 10{sup 17} cm{sup -3} doped p-InGaAsSb epitaxial layers for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90-100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 x 10{sup -11} cm{sup 3}/s and Auger coefficient (C) of 1 x 10{sup -28} cm{sup 6}/s.