Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth

de Almeida, V.F.

Oak Ridge National Laboratory

关键词: Aluminium;    Processing;    Marketing;    36 Materials Science;    Simulation;   

DOI  :  10.2172/814469
RP-ID  :  C/ORNL00-0587
RP-ID  :  AC05-00OR22725
RP-ID  :  814469

美国|英语

来源: UNT Digital Library

【 摘 要 】

The goal of this project is to apply advanced computer-aided modeling techniques for simulating coupled radiation transfer present in the bulk growth of aluminum nitride (AlN) single-crystals. Producing and marketing high-quality single-crystals of AlN is currently the focus of Crystal IS, Inc., which is engaged in building a new generation of substrates for electronic and optical-electronic devices. Modeling and simulation of this company's proprietary innovative processing of AlN can substantially improve the understanding of physical phenomena, assist design, and reduce the cost and time of research activities. This collaborative work supported the goals of Crystal IS, Inc. in process scale-up and fundamental analysis with promising computational tools.