AlGaN Materials Engineering for Integrated Multi-Function Systems

HAN, JUNG ; MITCHELL, CHRISTINE C. ; WALDRIP, KAREN NMN ; GUILINGER, TERRY R. ; KELLY, MICHAEL J. ; FLEMING, JAMES G. ; TSAO, SYLVIA SANTA INES ; FOLLSTAEDT, DAVID M. ; WAMPLER, WILLIAM R. ; LEE, STEPHEN R. ; CASALNUOVO, STEPHEN A. ; MANI, SEETHAMBAL S.

Sandia National Laboratories

关键词: Aluminium Nitrides;    Ultraviolet Radiation;    Gallium Nitrides;    Mocvd;    Porous Gan;   

DOI  :  10.2172/780286
RP-ID  :  SAND2001-0133
RP-ID  :  AC04-94AL85000
RP-ID  :  780286

美国|英语

来源: UNT Digital Library

【 摘 要 】

This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.