Electroabsorption and Transport Measurements and Modeling Research in Amorphous Silicon Based Solar Cells; Annual Report; 24 March 1999-23 March 2000

Schiff, E.A. ; Kopidakis, N. ; Lyou, J. ; Rane, S. ; Yuan, Q. ; Zhu, K. (Syracuse University)

National Renewable Energy Laboratory (U.S.)

关键词: P/I;    14 Solar Energy;    Pin Solar Cells;    Transport Measurements;    Solar Cells;   

DOI  :  10.2172/777315
RP-ID  :  NREL/SR-520-29504
RP-ID  :  AC36-99GO10337
RP-ID  :  777315

美国|英语

来源: UNT Digital Library

【 摘 要 】

We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential of VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.