Chemical reactions in TEOS/ozone chemical vapor deposition[TetraEthylOrtho Silicate]

HO,PAULINE

Sandia National Laboratories

关键词: Chemical Vapor Deposition;    Two-Dimensional Calculations;    36 Materials Science;    Mathematical Models;    Chemical Reaction Kinetics;   

DOI  :  10.2172/751369
RP-ID  :  SAND2000-0217
RP-ID  :  AC04-94AL85000
RP-ID  :  751369

美国|英语

来源: UNT Digital Library

【 摘 要 】

A reaction mechanism for TEOS/O{sub 3} CVD in a SVG/WJ atmospheric pressure furnace belt reactor has been developed and calibrated with experimental deposition rate data. One-dimensional simulations using this mechanism successfully reproduce the trends observed in a set of 31 experimental runs in a WJ-TEOS999 reactor. Two-dimensional simulations using this mechanism successfully reproduce the average deposition rates for 3 different experimental conditions in a WJ-1500TF reactor, although the deposition profiles predicted by the model are flatter than the experimental static prints.