Plasma-Assisted Co-evaporation of S and Se for Wide Band Gap Chalcopyrite Photovoltaics: Final Subcontract Report, December 2001 -- April 2005

Repins, I. ; Wolden, C.

National Renewable Energy Laboratory (U.S.)

关键词: Pv;    36 Materials Science;    Contractors;    Deposition;    Mass Spectrometry;   

DOI  :  10.2172/15016822
RP-ID  :  NREL/SR-520-38357
RP-ID  :  AC36-99-GO10337
RP-ID  :  15016822

美国|英语

来源: UNT Digital Library

【 摘 要 】

In this work, ITN Energy Systems (ITN) and lower-tier subcontractor Colorado School of Mines (CSM) explore the replacement of the molecular chalcogen precursors during deposition (e.g., Se2 or H2Se) with more reactive chalcogen monomers or radicals (e.g., Se). Molecular species are converted to atomic species in a low-pressure inductively coupled plasma (ICP). This program explored the use of plasma-activated chalcogen sources in CIGS co-evaporation to lower CIGS deposition temperature, increase utilization, increase deposition rate, and improve S:Se stoichiometry control. Plasma activation sources were designed and built, then operated and characterized over a wide range of conditions. Optical emission and mass spectrometry data show that chalcogens are effectively dissociated in the plasma. The enhanced reactivity achieved by the plasma processing was demonstrated by conversion of pre-deposited metal films to respective chalcogen-containing phases at low temperature and low chalcogen flux. The plasma-assisted co-evaporation (PACE) sources were also implemented in CIGS co-evaporation. No benefit from PACE was observed in device results, and frequent deposition failures occurred.